Ph.D in Electrical Engineering,1990.Columbia University, New York
M.S. in Electrical Engineering,1982.KAIST, Daegu, Korea
B.S. in Electronics Engineering,1980.Seoul National University, Seoul, Korea
WORK EXPERIENCE
Professor, School of Electrical Engineering and Computer Science, GIST (1994-Present)
Postdoctoral MTS, Bell Communications Research (1990-1994)
Graduate research assistant, NSF Center for Telecommunications Research(CTR) (1986-1990)
Senior MTS, Electronics and Telecommunications Research Institute (1982-1986)
INTRODUCE
High-Speed Integrated Circuit LaboratoryPrimary research objectives of this laboratory include design, fabrication, characterization of high-speed devices, integrated circuits, and subsystems for high-speed optical and wireless communication system applications. The laboratory has design tools including a Silvaco device simulator, microwave circuit design simulators including HP Microwave Design Software (MDS/ADS) and HSPICE, and HP ICCAP for device parameter extraction and modeling. The laboratory also has a clean room that is equipped with various compound semiconductor device and circuit fabrication equipments and facilities. The laboratory currently has characterization equipments including a semiconductor parameter analyzer, a spectrum anayzers (50 GHz), a vector network analyzer (50 GHz), a load-pull power measurement system (50 GHz), a high-frequency noise measurement system (40 GHz), a low-frequency noise measurement system (1 Hz 1 MHz), a microwave probe station, a communication signal analyzer (optical: 40 Gbps, electrical: 50 GHz), a subpicosecond optical sampling system, a low-noise amplifier, and a low temperature probe station. These measurement systems primary cover a frequency range up to 50 GHz and will be upgraded to cover higher frequency ranges.On-going research projects in the laboratory are the development of millimeter-wave device including InPand GaAs-based HEMT, HBT, compound seniconductor MOSFETs, high-speed photodetectors, quantum well/dot far-infrared photodetectors and the development of MMICs, modules for wireless communications, modules for millimeterwave-over-fiber (MMoF) sysetm. Detailed research topics include epitaxial growth using CBEand MBE, device fabrication, device modelling and parameter extraction, microwave device (noise and power) characterization, high-speed optical device characterization, MMIC design, MMIC fabrication, reliability of devices and MMICs.
Semiconductor Processing Laboratory (Clean Room)
There is a clean room (4,320 square-feet with the class of 1,000 to 10,000) that is equipped with facilities for fabrication of compound semiconductor devices and circuits for high-speed communication applications. The fabrication equipments currently installed are a V80H chemical beam epitaxy system (CBE), a V80H-10K Molecular Beam Epitaxy(MBE), a J5800LV scanning electron microscope (SEM), a Raith Elphy Plus SEM-based e-beam lithography system, a Karl Suss Jirset Photoresist spin coater, a Karl Suss MJB3 mask aligner with a backside alignment capability, Leicaoptical microscopes, an Oxford Plus80 reactive ion etching (RIE) system, an Oxford Plus80 plasma enhance chemical vapor deposition (PECVD) system, a Temescal BJD-1800 e-beam evaporator system, an Alpha-step profiler, and and an electro-chemical CV profiler (Polaron), chemical wet stations. The equipments are capable of fabricating ultra-high-speed devices including high-electron mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), high-speed detectors, and modulators operating up to a few hundred GHz and integrated circuits operating up to tens of GHz.
