Model: JEOL 5800LV Acceleration voltage: ~30kV
Ebeam evaporator makes the deposition of many new and unusual materials possible because electron beam guns offer high evaporation rates, freedom from contamination, precise control, excellent economy, and high thermal efficiency. The form of the evaporant is not restricted, and feeding, filling and changing from one evaporant to another are easy. Pure elements, compounds, alloys and mutually insoluble materials can be processed by electron beam evaporation.
In RIE chamber, reactive ions, which accelerated toward unmasked regins of samples and etch them, are created by striking a plasma in an appropriate gas, such as oxygen or a chlorine containing compound. RIE offers excellent control of etch rates and uniformity because gas concentrations and substrate temperature can be tightly controlled.
In Chemical Vapor Deposition processing (CVD), gases containing constituent atoms of the deposited films are mixed together and passed over a heated substrate,where they deposit dielectric films. SiO2 and Si3N4 films are deposited by PECVD or OECVD.
Our MBE and CBE systems are from VG Semicon in Britain. CBE system is the same model of that of MBE system (V80H MBE System) except the part of source. Related contents are introduced to here.
While sub-micron patterning is conducted by using e-beam lithography system, usual device and MMIC lithograhpy is conducted by using this system.
During mask aligning, to instect the back side of substrate, an infrared ray and a CCD camera are used while inspecting the front side of substrate with optical microscope.
All PR/ER coating processes are conducted with this programmably (spin speed, acceleration, time duration, etc.) controlled spin coater.
Except them, wet stations, Alpha-Step 500 Surface Profiler and PN4300PC ECV Profiler are euiped. And N2, Liquid N2, vaccum and DI water lines are comletely equiped for convenience.